BFS466L6 NPN Silicon RF TWIN Transistor* * Low voltage/ low current applications 4 * Ideal for VCO modules and low noise amplifiers * World's smallest SMD 6-pin leadless package 3 5 2 6 1 * Built in 2 transitors (TR1: die as BFR460L3, TR2: die as BFR360L3) * Low noise figure: TR1: 1.1dB at 1.8 GHz TR2: 1.0 dB at 1.8 GHz * TR1 with excellent ESD performance typical value > 1500 V (HBM) * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101 * Short term description $ 6 4 # 6 4 " ! ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS466L6 1Pb-containing Marking Pin Configuration Package AC 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 package may be available upon special request 1 2007-04-26 BFS466L6 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value TR1, TA > 0 C 4.5 TR1, TA 0 C 4.2 TR2, TA > 0 C 6 TR2, TA 0 C 6 Collector-emitter voltage Unit V VCES TR1 15 TR2 15 Collector-base voltage VCBO TR1 15 TR2 15 Emitter-base voltage VEBO TR1 1.5 TR2 2 Collector current mA IC TR1 50 TR2 35 2 2007-04-26 BFS466L6 Maximum Ratings Parameter Symbol Base current IB Value mA TR1 5 TR2 4 Total power dissipation1) mW Ptot TR1, TS 104C 200 TR2, TS 102C 210 Junction temperature C Tj TR1 150 TR2 150 Ambient temperature Unit TA TR1 -65 ... 150 TR2 -65 ... 150 Storage temperature T stg TR1 -65 ... 150 TR2 -65 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point 2) RthJS Value K/W TR1 230 TR2 230 1T Unit S is measured on the collector lead at the soldering point to the pcb calculation of RthJA please refer to Application Note Thermal Resistance 2For 3 2007-04-26 BFS466L6 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V V(BR)CEO TR1, IC = 1 mA, IB = 0 4.5 5 - TR2, IC = 1 mA, IB = 0 6 9 - Collector-emitter cutoff current A ICES TR1, V CE = 15 V, V BE = 0 - - 10 TR2, V CE = 15 V, V BE = 0 - - 10 Collector-base cutoff current nA ICBO TR1, V CB = 5 V, IE = 0 - - 100 TR2, V CB = 5 V, IE = 0 - - 100 Emitter-base cutoff current A IEBO TR1, V EB = 0,5 V, I C = 0 - - 1 TR2, V EB = 1 V, I C = 0 - - 1 DC current gain hFE - TR1, IC = 20 mA, VCE = 3 V, Pulse measured 90 120 160 TR2, IC = 15 mA, VCE = 3 V, Pulse measured 90 120 160 4 2007-04-26 BFS466L6 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. AC Characteristics (verified by random sampling) Transition frequency GHz fT TR1, IC = 30 mA, VCE = 3 V, f = 1 GHz 16 22 - TR2, IC = 15 mA, VCE = 3 V, f = 1 GHz 11 14 - Collector-base capacitance pF Ccb TR1, V CB = 3 V, f = 1 MHz, VBE = 0 , emitter grounded - 0.29 0.45 - 0.26 0.4 - 0.14 - - 0.14 - - 0.54 - - 0.43 - TR2, V CB = 5 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance Cce TR1, V CE = 3 V, f = 1 MHz, VBE = 0 , base grounded TR2, V CE = 5 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance Ceb TR1, V EB = 0.5 V, f = 1 MHz, V CB = 0 , collector grounded TR2, V EB = 0.5 V, f = 1 MHz, V CB = 0 , collector grounded 5 2007-04-26 BFS466L6 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. typ. max. AC Characteristics (verified by random sampling) Noise figure F TR1, IC=5mA, V CE = 3 V, f = 1.8 GHz, ZS = ZSopt - 1.1 - TR1, IC=5mA, V CE = 3 V, f = 3 GHz, ZS = Z Sopt - 1.4 - TR2, IC=3mA, V CE = 3 V, f = 1.8 GHz, ZS = ZSopt - 1 - TR2, IC=3mA, V CE = 3 V, f = 3 GHz, ZS = Z Sopt - 1.4 - TR1, IC = 20 mA, V CE = 3 V, ZS=ZSopt, Z L=ZLopt, f = 1.8 GHz - 17 - TR1, IC = 20 mA, V CE = 3 V, ZS=ZSopt, Z L=ZLopt, f = 3 GHz - 12 - TR2, IC = 15 mA, V CE = 3 V, ZS=ZSopt, Z L=ZLopt, f = 1.8 GHz - 16.5 - TR2, IC = 15 mA, V CE = 3 V, ZS=ZSopt, Z L=ZLopt, f = 3 GHz - 11.5 - TR1, IC = 20 mA, V CE = 3 V, ZS = ZL = 50, f = 1.8GHz - 14.5 - TR1, IC = 20 mA, V CE = 3 V, ZS = ZL = 50, f = 3GHz - 10 - TR2, IC = 15 mA, V CE = 3 V, ZS = ZL = 50, f = 1.8GHz - 13.5 - TR2, IC = 15 mA, V CE = 3 V, ZS = ZL = 50, f = 3GHz - 9.5 - Power gain, maximum available 1) Unit dB G ma |S 21e|2 Transducer gain Third order intercept point at output 2) dBm IP 3 TR1, V CE=3V, IC=20mA, ZS=ZL=50, f=1.8GHz - 28 - TR2, V CE=3V, IC=15mA, ZS=ZL=50, f=1.8GHz - 24.5 - TR1, IC=20mA, V CE=3V, ZS=ZL=50, f=1.8GHz - 12 - TR1, IC=15mA, V CE=3V, ZS=ZL=50, f=1.8GHz - 9 - 1dB Compression point, at output P-1dB 1/2 ma = |S 21e / S12e | (k-(k-1) ) 1G 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 6 2007-04-26 Package TSLP-6-1 BFS466L6 Package Outline Bottom view 0.05 MAX. 5 6 0.87 0.05 4 3 2 1 0.8 0.05 0.450.05 3 4 2 5 0.55 0.05 6 1 2 x 0.35 0.035 1) Pin 1 marking 4 x 0.15 0.035 1) 1.2 0.05 +0.1 4 x 0.23 0.035 1) 0.4 2 x 0.23 0.035 1) Top view 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.8 0.25 0.25 0.185 1.12 1.12 0.25 R0.125 0.76 0.185 0.8 0.37 0.29 0.25 0.25 0.22 0.18 Copper 0.25 Only 100 m stencil thickness recommended Stencil apertures Solder mask Marking Layout (Example) BFS360L6 Type code Pin 1 marking Laser marking Standard Packing Reel o180 mm = 15.000 Pieces/Reel 0.5 Pin 1 marking 8 1.45 4 1.05 7 2007-04-26 BFS466L6 Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2007-04-26